Transparent conducting oxides (TCOs) and transparent oxide semiconductors(TOSs) have become necessary materials for a variety of applications in theinformation and energy technologies, ranging from transparent electrodes toactive electronics components. Perovskite barium stannate (BaSnO3), a new TCOor TOS system, is a potential platform for realizing optoelectronic devices andobserving novel electronic quantum states due to its high electron mobility,excellent thermal stability, high transparency, structural versatility, andflexible doping controllability at room temperature. This article reviewsrecent progress in the doped BaSnO3 system, discussing the wide physicalproperties, electron-scattering mechanism, and demonstration of keysemiconducting devices such as pn diodes and field-effect transistors.Moreover, we discuss the pathways to achieving two-dimensional electron gasesat the interface between BaSnO3 and other perovskite oxides and describeremaining challenges for observing novel quantum phenomena at theheterointerface.
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